Anisotropic optical response of GaN and AlN nanowires

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Anisotropic optical response of GaN and AlN nanowires.

We present a theoretical study of the electronic structure and optical properties of free-standing GaN and AlN nanowires. We have implemented the empirical tight-binding method, with an orbital basis sp(3), that includes the spin-orbit interaction. The passivation of the dangling bonds at the free surfaces is also studied, together with the effects on the electronic structure of the nanowire. ...

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ژورنال

عنوان ژورنال: Journal of Physics: Condensed Matter

سال: 2012

ISSN: 0953-8984,1361-648X

DOI: 10.1088/0953-8984/24/29/295301